MANUFACTURING METHOD OF FERROELECTRIC THIN-FILM DEVICE

PROBLEM TO BE SOLVED: To improve the intensity of ferroelectric devices utilizing a good step coverage characteristic of a minute droplet material solution deposit method, and to manufacture a ferroelectric thin film with good crystal orientation in a sure and stable manner. SOLUTION: A manufacturing process of the ferroelectric thin-film devices is to deposit a Sol-gel material for ferroelectric in minute droplets on a substrate, including the process of forming the ferroelectric thin film by heating and crystallization and the process of surface cleaning by ozone irradiation to a base electrode prior to the deposit of the Sol-gel material, and to continuously perform the processes without exposure to the atmosphere. Furthermore, a degreasing process and a crystallization annealing process are performed under reduced pressure after the deposit.