METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device by which its production cost can be reduced, and further, the working ratio of the device can be increased. SOLUTION: The method for producing a semiconductor device has a film deposition stage where a prescribed film is...
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| creator | ITAYA HIDEJI |
| description | PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device by which its production cost can be reduced, and further, the working ratio of the device can be increased. SOLUTION: The method for producing a semiconductor device has a film deposition stage where a prescribed film is deposited on a substrate 1 in a reaction chamber 4, a cleaning stage where a cleaning gas is flowed into the reaction chamber 4, and the film stuck to the inside of the reaction chamber 4 in the film deposition stage is removed at a temperature higher than the film deposition temperature in the film deposition stage, and a purge stage where, after the cleaning stage, the inside of the reaction chamber 4 is subjected to a gas purge at a temperature almost same as that in the cleaning stage. |
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SOLUTION: The method for producing a semiconductor device has a film deposition stage where a prescribed film is deposited on a substrate 1 in a reaction chamber 4, a cleaning stage where a cleaning gas is flowed into the reaction chamber 4, and the film stuck to the inside of the reaction chamber 4 in the film deposition stage is removed at a temperature higher than the film deposition temperature in the film deposition stage, and a purge stage where, after the cleaning stage, the inside of the reaction chamber 4 is subjected to a gas purge at a temperature almost same as that in the cleaning stage.</description><edition>7</edition><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021003&DB=EPODOC&CC=JP&NR=2002285337A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021003&DB=EPODOC&CC=JP&NR=2002285337A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITAYA HIDEJI</creatorcontrib><title>METHOD FOR PRODUCING SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device by which its production cost can be reduced, and further, the working ratio of the device can be increased. 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SOLUTION: The method for producing a semiconductor device has a film deposition stage where a prescribed film is deposited on a substrate 1 in a reaction chamber 4, a cleaning stage where a cleaning gas is flowed into the reaction chamber 4, and the film stuck to the inside of the reaction chamber 4 in the film deposition stage is removed at a temperature higher than the film deposition temperature in the film deposition stage, and a purge stage where, after the cleaning stage, the inside of the reaction chamber 4 is subjected to a gas purge at a temperature almost same as that in the cleaning stage.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
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