METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device by which its production cost can be reduced, and further, the working ratio of the device can be increased. SOLUTION: The method for producing a semiconductor device has a film deposition stage where a prescribed film is...

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1. Verfasser: ITAYA HIDEJI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device by which its production cost can be reduced, and further, the working ratio of the device can be increased. SOLUTION: The method for producing a semiconductor device has a film deposition stage where a prescribed film is deposited on a substrate 1 in a reaction chamber 4, a cleaning stage where a cleaning gas is flowed into the reaction chamber 4, and the film stuck to the inside of the reaction chamber 4 in the film deposition stage is removed at a temperature higher than the film deposition temperature in the film deposition stage, and a purge stage where, after the cleaning stage, the inside of the reaction chamber 4 is subjected to a gas purge at a temperature almost same as that in the cleaning stage.