GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide a gallium nitride compound semiconductor light emitting device with which an LED lamp, etc., can be assembled with high productivity, by enabling to recognize the position of a recognition land correctly and accurately because an illumination light reflects perpendicularly to a TV camera side without reflecting irregularly when an image is picked up with the TV camera. SOLUTION: An n-type GaN layer 2, an active layer 3, a p-type GaN layer 4 and a current diffusing layer 5 are laminated on a substrate 1 in this order. A p-type electrode 6 is formed on the layer 5. An n-type electrode 8 is formed as a recognition land on an n-type electrode forming recess obtained by removing the layers 5, 4, 3 and 2 by etching.