SUBSTRATE-PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To perform a high-temperature heating process under desired depressurization, while depressurized discharge is prevented. SOLUTION: A work coil 21, which evenly heats wafers 1 on a susceptor 18, is provided in a processing chamber 14; a work coil cover 22 which covers the work coil 21 to form a heater chamber 23 is provided on a base 11; the heater chamber 23 is closed and isolated from the processing chamber 14 by a sealing member 24; and the heater chamber 23 is connected to a heater chamber evacuation line 30 which is different from a processing chamber evacuation line 26. Though the voltage between terminals of the work coil becomes high at high-frequency inductive heating of the work coil in an epitaxial process, depressurized discharge will not take place with the work coil, because the internal pressure of the heater chamber is kept at a discharge limit depressurization or higher for the work coil. Meanwhile, since the internal pressure of the processing chamber is kept below the depressurization which is required for depressurization epitaxial growth, the depressurization epitaxial growth is performed, while the processing temperature is kept high.