METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To enable a low dielectric constant insulating film to be certainly inserted between wirings having a small wiring pitch, and to prevent the occurrence of defects such as exfoliations or scratches in the low dielectric constant insulating film. SOLUTION: After having formed a first insulating film 101 consisting of an inorganic low dielectric constant film on a silicon substrate 100, by patterning the first insulating film 101, the first insulating film 101 remains in the first region. After having formed a second insulating film 103 consisting of a silicon oxide film on the silicon substrate 100, the second insulating film 103 is planarized and made into a thin film by polishing using CMP method, and the second insulating film 103 made into the thin film is then formed on the first insulating film 101. After having formed wiring grooves 105 in the second insulating film 103 made into the thin film and the first insulating film 101, by burying a metal film in the wiring grooves 105, metal wirings are formed.