SPIN VALVE-TYPE STRUCTURE AND METHOD FOR FORMING IT

PROBLEM TO BE SOLVED: To provide a spin valve structure in which enhancement of reproduction characteristic, based on reduction in a half width PW50, is made compatible with prevention of a short circuit. SOLUTION: A submagnetic shield layer 26, composed of a high-permeability and high-electrical re...

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Bibliographische Detailangaben
Hauptverfasser:	KAII CHO, YO HOTEI, SEI SHUKO, KAN CHURYO, KOKU KYOSHU
Format:	Patent
Sprache:	eng
Schlagworte:	APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS DEAF-AID SETS ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKEACOUSTIC ELECTROMECHANICAL TRANSDUCERS MAGNETS MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PERFORMING OPERATIONS PHYSICS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL PUBLIC ADDRESS SYSTEMS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SPRAYING OR ATOMISING IN GENERAL TESTING TRANSFORMERS TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a spin valve structure in which enhancement of reproduction characteristic, based on reduction in a half width PW50, is made compatible with prevention of a short circuit. SOLUTION: A submagnetic shield layer 26, composed of a high-permeability and high-electrical resistance ferromagnetic material, is arranged and installed between a spin valve reproducing element 20 and an upper-part insulating layer 18. Since there is the layer 26, a substantial inter-shield distance contributing to the half width PW50 is prescribed by a distance (inter-shield distance L2) between a lower-part main magnetic shielding layer 15 and the layer 26. As compared with the case where the layer 26 is not installed, the distance L2 is reduced, and the distance L2 is not related to the layer thickness of a layer 18. Due to the small distance L2, the half width PW50 is reduced. When the layer thickness of the layer 18 is ensured, it is possible to prevent short circuits between the reproducing element 20 and an upper-part main magnetic shield layer 16.