METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a capacitor manufacturing method of a semiconductor element which can prevent a lower diffusion preventing film from being oxidized, by reducing oxygen as reaction gas for forming an Ru film at the time of forming the Ru film as a lower electrode. SOLUTION: The capac...

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Bibliographische Detailangaben
Hauptverfasser:	KIM KYONG-MIN, SO KANSO, LIM CHAN, RI SHOMIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a capacitor manufacturing method of a semiconductor element which can prevent a lower diffusion preventing film from being oxidized, by reducing oxygen as reaction gas for forming an Ru film at the time of forming the Ru film as a lower electrode. SOLUTION: The capacitor manufacturing method of the semiconductor element includes a stage where a semiconductor substrate 11 on which prescribed structure is formed is installed in a reaction furnace and the reaction furnace is maintained to prescribed temperature and pressure, a stage where the raw material substance of Ru, oxygen and NH3 gas are made to flow into the reaction furnace and the Ru film 17 is formed on the semiconductor substrate, and a stage where the Ru film is patterned, the lower electrode is formed and the dielectric film and the upper electrode 14 are formed on whole structure.