CMP ABRASIVE AND POLISHING METHOD OF SUBSTRATE
PROBLEM TO BE SOLVED: To provide a CMP abrasive which can polish a silicon oxide film at a high speed without leaving polishing scratches, and a polishing method of a substrate. SOLUTION: In this polishing method of the substrate, a CMP abrasive for semiconductors comprising cerium oxide particles,...
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| creator | OMORI YOSHIKAZU YAMAMOTO YASUHIRO |
| description | PROBLEM TO BE SOLVED: To provide a CMP abrasive which can polish a silicon oxide film at a high speed without leaving polishing scratches, and a polishing method of a substrate. SOLUTION: In this polishing method of the substrate, a CMP abrasive for semiconductors comprising cerium oxide particles, a dispersant and water and the substrate on which a film to be polished is formed are pressed onto a polishing cloth of a polishing platen, and feeding the CMP abrasive to the clearance between the polished film and the polishing cloth, the film to be polished is polished by moving the substrate and the polishing platen relatively. |
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SOLUTION: In this polishing method of the substrate, a CMP abrasive for semiconductors comprising cerium oxide particles, a dispersant and water and the substrate on which a film to be polished is formed are pressed onto a polishing cloth of a polishing platen, and feeding the CMP abrasive to the clearance between the polished film and the polishing cloth, the film to be polished is polished by moving the substrate and the polishing platen relatively.</description><edition>7</edition><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020802&DB=EPODOC&CC=JP&NR=2002217140A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020802&DB=EPODOC&CC=JP&NR=2002217140A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OMORI YOSHIKAZU</creatorcontrib><creatorcontrib>YAMAMOTO YASUHIRO</creatorcontrib><title>CMP ABRASIVE AND POLISHING METHOD OF SUBSTRATE</title><description>PROBLEM TO BE SOLVED: To provide a CMP abrasive which can polish a silicon oxide film at a high speed without leaving polishing scratches, and a polishing method of a substrate. SOLUTION: In this polishing method of the substrate, a CMP abrasive for semiconductors comprising cerium oxide particles, a dispersant and water and the substrate on which a film to be polished is formed are pressed onto a polishing cloth of a polishing platen, and feeding the CMP abrasive to the clearance between the polished film and the polishing cloth, the film to be polished is polished by moving the substrate and the polishing platen relatively.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBz9g1QcHQKcgz2DHNVcPRzUQjw9_EM9vD0c1fwdQ3x8HdR8HdTCA51Cg4Jcgxx5WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGRkaG5oYmBo7GRCkCABZ2Je8</recordid><startdate>20020802</startdate><enddate>20020802</enddate><creator>OMORI YOSHIKAZU</creator><creator>YAMAMOTO YASUHIRO</creator><scope>EVB</scope></search><sort><creationdate>20020802</creationdate><title>CMP ABRASIVE AND POLISHING METHOD OF SUBSTRATE</title><author>OMORI YOSHIKAZU ; YAMAMOTO YASUHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2002217140A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>OMORI YOSHIKAZU</creatorcontrib><creatorcontrib>YAMAMOTO YASUHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OMORI YOSHIKAZU</au><au>YAMAMOTO YASUHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CMP ABRASIVE AND POLISHING METHOD OF SUBSTRATE</title><date>2002-08-02</date><risdate>2002</risdate><abstract>PROBLEM TO BE SOLVED: To provide a CMP abrasive which can polish a silicon oxide film at a high speed without leaving polishing scratches, and a polishing method of a substrate. SOLUTION: In this polishing method of the substrate, a CMP abrasive for semiconductors comprising cerium oxide particles, a dispersant and water and the substrate on which a film to be polished is formed are pressed onto a polishing cloth of a polishing platen, and feeding the CMP abrasive to the clearance between the polished film and the polishing cloth, the film to be polished is polished by moving the substrate and the polishing platen relatively.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | CMP ABRASIVE AND POLISHING METHOD OF SUBSTRATE |
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