CMP ABRASIVE AND POLISHING METHOD OF SUBSTRATE

PROBLEM TO BE SOLVED: To provide a CMP abrasive which can polish a silicon oxide film at a high speed without leaving polishing scratches, and a polishing method of a substrate. SOLUTION: In this polishing method of the substrate, a CMP abrasive for semiconductors comprising cerium oxide particles,...

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Bibliographische Detailangaben
Hauptverfasser:	OMORI YOSHIKAZU, YAMAMOTO YASUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a CMP abrasive which can polish a silicon oxide film at a high speed without leaving polishing scratches, and a polishing method of a substrate. SOLUTION: In this polishing method of the substrate, a CMP abrasive for semiconductors comprising cerium oxide particles, a dispersant and water and the substrate on which a film to be polished is formed are pressed onto a polishing cloth of a polishing platen, and feeding the CMP abrasive to the clearance between the polished film and the polishing cloth, the film to be polished is polished by moving the substrate and the polishing platen relatively.