METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a manufacturing cost can be made low and an apparatus-operating ratio can be raised. SOLUTION: This method for manufacturing the semiconductor device comprises a film forming step for forming a film including...
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| creator | ITAYA HIDEJI |
| description | PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a manufacturing cost can be made low and an apparatus-operating ratio can be raised. SOLUTION: This method for manufacturing the semiconductor device comprises a film forming step for forming a film including Ru on the substrate 1 in a reaction chamber 4, a cleaning step for flowing ClF3 gas into the reaction chamber 4 and removing the film adhered to the inside of the reaction chamber 4 in the film forming step, and a purging step for purging the reaction chamber 4 at a lower pressure than that in cleaning, for example, 133 Pa or less, after the cleaning step. |
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SOLUTION: This method for manufacturing the semiconductor device comprises a film forming step for forming a film including Ru on the substrate 1 in a reaction chamber 4, a cleaning step for flowing ClF3 gas into the reaction chamber 4 and removing the film adhered to the inside of the reaction chamber 4 in the film forming step, and a purging step for purging the reaction chamber 4 at a lower pressure than that in cleaning, for example, 133 Pa or less, after the cleaning step.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020719&DB=EPODOC&CC=JP&NR=2002203833A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020719&DB=EPODOC&CC=JP&NR=2002203833A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITAYA HIDEJI</creatorcontrib><title>METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a manufacturing cost can be made low and an apparatus-operating ratio can be raised. 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SOLUTION: This method for manufacturing the semiconductor device comprises a film forming step for forming a film including Ru on the substrate 1 in a reaction chamber 4, a cleaning step for flowing ClF3 gas into the reaction chamber 4 and removing the film adhered to the inside of the reaction chamber 4 in the film forming step, and a purging step for purging the reaction chamber 4 at a lower pressure than that in cleaning, for example, 133 Pa or less, after the cleaning step.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
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