TOROIDAL PLASMA SOURCE FOR PLASMA PROCESSING

PROBLEM TO BE SOLVED: To form high-density uniform plasma as well as to avoid the problem of surface erosion. SOLUTION: A toroidal plasma source (28) is located within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with θ-symmetry. The poloidal plasma current...

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Hauptverfasser:	COX MICHAEL S, WANAMAKER DAVID P, LANE CHRISTOPHER T, PARKS JOHN, LAI CANFENG, LOEWENHARDT PETER K, MAJEWSKI ROBERT B, SHAMOUILIAN SHAMOUIL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To form high-density uniform plasma as well as to avoid the problem of surface erosion. SOLUTION: A toroidal plasma source (28) is located within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with θ-symmetry. The poloidal plasma current is essentially parallel to the surface of a plasma-generating structure. Consequently, sputtering erosion of the inner walls is reduced. In addition, a shaped member (66) between a substrate and the plasma source controls the plasma density in a prescribed fashion to enhance-plasma processing uniformity.