SYSTEM AND METHOD FOR DEPOSITING FILM

PROBLEM TO BE SOLVED: To produce a thin film having a uniform thickness even when a multilayer structure of thin film is formed. SOLUTION: The film deposition system 1 comprises a chamber 2, a system 12 for supplying material gas into the chamber 2 during film deposition, and a system 13 for removin...

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Bibliographische Detailangaben
1. Verfasser:	TOKAI NOBUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To produce a thin film having a uniform thickness even when a multilayer structure of thin film is formed. SOLUTION: The film deposition system 1 comprises a chamber 2, a system 12 for supplying material gas into the chamber 2 during film deposition, and a system 13 for removing the material gas remaining in the chamber 2 after film deposition wherein the material gas removing system 13 comprises a unit 16 for keeping the pressure at the time of film deposition in the chamber 2 over a specified time after starting removal of material gas.