METHOD FOR STRUCTURALLY INCREASING MECHANICAL PERFORMANCE OF SILICON LEVEL INTERCONNECTING FILM
PROBLEM TO BE SOLVED: To provide a method for preventing micro cracks of an inter level dielectric caused from a stress applied to a bonding pad when bonding in a process of semiconductor. SOLUTION: The inner level dielectric IL3 between metal layers Mn, Mn-1 is strengthened by a conductive via patt...
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| creator | RINCON REYNALDO SUNDARARAMAN VISWANATHAN HOTCHKISS GREGORY B EDWARDS DARVIN R CHISHOLM MICHAEL F |
| description | PROBLEM TO BE SOLVED: To provide a method for preventing micro cracks of an inter level dielectric caused from a stress applied to a bonding pad when bonding in a process of semiconductor. SOLUTION: The inner level dielectric IL3 between metal layers Mn, Mn-1 is strengthened by a conductive via pattern 110 between the metal interconnecting layer Mn in a region of the bonding pad and the lower metal interconnecting layer Mn-1. The conductive via layer 110 includes, for example, a grid of a parallel rail or a cross hatch rail. The conductive via layer 110 prevents the micro crack caused from the stress applied to the bonding pad 112 by dispersing the stress concentration laterally. |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | METHOD FOR STRUCTURALLY INCREASING MECHANICAL PERFORMANCE OF SILICON LEVEL INTERCONNECTING FILM |
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