HIGH THERMAL CONDUCTIVE SILICON NITRIDE CERAMIC AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To obtain a silicon nitride sintered body which enables the densification and grain growth of a sintered body by a low temperature sintering of =100 W/mK. SOLUTION: When a high thermal conductive silicon nitride sintered body is manufactured so that the densification and grain...
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| creator | ITAYA SEIJI HIRAO KIYOSHI HAYASHI HIROYUKI |
| description | PROBLEM TO BE SOLVED: To obtain a silicon nitride sintered body which enables the densification and grain growth of a sintered body by a low temperature sintering of =100 W/mK. SOLUTION: When a high thermal conductive silicon nitride sintered body is manufactured so that the densification and grain growth of a sintered body are enabled by low temperature sintering of |
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SOLUTION: When a high thermal conductive silicon nitride sintered body is manufactured so that the densification and grain growth of a sintered body are enabled by low temperature sintering of <=1900 deg.C, the silicon nitride powder wherein the sintering agent which contains at least silicon nitride magnesium (MgSiN2) is added, is molded. Subsequently, sintering the silicon nitride powder at a temperature of <=1900 deg.C, the densely sintered body which has a high thermal conductivity of >=100 W/mK, is obtained.</description><edition>7</edition><language>eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LIME, MAGNESIA ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; METALLURGY ; PRINTED CIRCUITS ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020509&DB=EPODOC&CC=JP&NR=2002128569A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020509&DB=EPODOC&CC=JP&NR=2002128569A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITAYA SEIJI</creatorcontrib><creatorcontrib>HIRAO KIYOSHI</creatorcontrib><creatorcontrib>HAYASHI HIROYUKI</creatorcontrib><title>HIGH THERMAL CONDUCTIVE SILICON NITRIDE CERAMIC AND ITS MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To obtain a silicon nitride sintered body which enables the densification and grain growth of a sintered body by a low temperature sintering of <=1900 deg.C, and has a high thermal conductivity of >=100 W/mK. SOLUTION: When a high thermal conductive silicon nitride sintered body is manufactured so that the densification and grain growth of a sintered body are enabled by low temperature sintering of <=1900 deg.C, the silicon nitride powder wherein the sintering agent which contains at least silicon nitride magnesium (MgSiN2) is added, is molded. Subsequently, sintering the silicon nitride powder at a temperature of <=1900 deg.C, the densely sintered body which has a high thermal conductivity of >=100 W/mK, is obtained.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LIME, MAGNESIA</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>METALLURGY</subject><subject>PRINTED CIRCUITS</subject><subject>REFRACTORIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQgOEsDqK-w-Eu1Iii45Fcm5MklfTiWorESbRQ3x8dfACnnw_-ufKOGwfiKAX0YNposxG-EnTs-UuILIktgaGEgQ1gtMDSQcCYazSSE8cGAolr7VLN7sNjKqtfF2pdkxi3KeOrL9M43MqzvPvzRVeV3urj_nDC3V_TBwvQLlo</recordid><startdate>20020509</startdate><enddate>20020509</enddate><creator>ITAYA SEIJI</creator><creator>HIRAO KIYOSHI</creator><creator>HAYASHI HIROYUKI</creator><scope>EVB</scope></search><sort><creationdate>20020509</creationdate><title>HIGH THERMAL CONDUCTIVE SILICON NITRIDE CERAMIC AND ITS MANUFACTURING METHOD</title><author>ITAYA SEIJI ; HIRAO KIYOSHI ; HAYASHI HIROYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2002128569A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LIME, MAGNESIA</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>METALLURGY</topic><topic>PRINTED CIRCUITS</topic><topic>REFRACTORIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>ITAYA SEIJI</creatorcontrib><creatorcontrib>HIRAO KIYOSHI</creatorcontrib><creatorcontrib>HAYASHI HIROYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ITAYA SEIJI</au><au>HIRAO KIYOSHI</au><au>HAYASHI HIROYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH THERMAL CONDUCTIVE SILICON NITRIDE CERAMIC AND ITS MANUFACTURING METHOD</title><date>2002-05-09</date><risdate>2002</risdate><abstract>PROBLEM TO BE SOLVED: To obtain a silicon nitride sintered body which enables the densification and grain growth of a sintered body by a low temperature sintering of <=1900 deg.C, and has a high thermal conductivity of >=100 W/mK. SOLUTION: When a high thermal conductive silicon nitride sintered body is manufactured so that the densification and grain growth of a sintered body are enabled by low temperature sintering of <=1900 deg.C, the silicon nitride powder wherein the sintering agent which contains at least silicon nitride magnesium (MgSiN2) is added, is molded. Subsequently, sintering the silicon nitride powder at a temperature of <=1900 deg.C, the densely sintered body which has a high thermal conductivity of >=100 W/mK, is obtained.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE |
| title | HIGH THERMAL CONDUCTIVE SILICON NITRIDE CERAMIC AND ITS MANUFACTURING METHOD |
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