HIGH THERMAL CONDUCTIVE SILICON NITRIDE CERAMIC AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To obtain a silicon nitride sintered body which enables the densification and grain growth of a sintered body by a low temperature sintering of =100 W/mK. SOLUTION: When a high thermal conductive silicon nitride sintered body is manufactured so that the densification and grain...

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Bibliographische Detailangaben
Hauptverfasser:	ITAYA SEIJI, HIRAO KIYOSHI, HAYASHI HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a silicon nitride sintered body which enables the densification and grain growth of a sintered body by a low temperature sintering of =100 W/mK. SOLUTION: When a high thermal conductive silicon nitride sintered body is manufactured so that the densification and grain growth of a sintered body are enabled by low temperature sintering of