APPARATUS AND METHOD FOR PATTERN EVALUATION

PROBLEM TO BE SOLVED: To provide an apparatus and a method for evaluation of a pattern, where the edge roughness of the pattern can be measured easily using a correlation between diffracted light and a scattered intensity by increasing the selectivity of irradiation light on the basis of the defect...

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Bibliographische Detailangaben
Hauptverfasser:	NAKASUGI TETSUO, MIZUNO HISAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an apparatus and a method for evaluation of a pattern, where the edge roughness of the pattern can be measured easily using a correlation between diffracted light and a scattered intensity by increasing the selectivity of irradiation light on the basis of the defect inspection of a resist pattern or the like and on the basis of a pattern-measuring method. SOLUTION: The apparatus and the method for the evaluation of the resist pattern are provided with a light source means, which generates light 3 capable of being incident perpendicularly or obliquely, with reference to a wafer such as a semiconductor substrate or the like having the formed resist pattern to be evaluated, a photodetector detection means 5, a spectrum analytical means 7 and a means which calculates the roughness of the resist pattern, on the basis of the result of a spectrum analysis. The selectivity of the irradiation light is increased by the method. The edge roughness is not measured on the basis of a light intensity as in conventional cases. The spread of the light is detected by the spectrum analysis, and the edge roughness of the resist pattern can be measured easily.