METHOD FOR PLATING COPPER THIN FILM
PROBLEM TO BE SOLVED: To reduce defects generated on the boundaries of copper seed layers by depositing copper thin films having low specific resistance and strongly oriented to the (111) face on the copper seed layers and to deposit the copper thin films having good coverability onto fine contact h...
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| creator | HARA TORU MIYAMOTO MITSUO SAKAMOTO HITOSHI TATENO TOSHIO OSADA TOSHIAKI ISHIDA SHOICHI |
| description | PROBLEM TO BE SOLVED: To reduce defects generated on the boundaries of copper seed layers by depositing copper thin films having low specific resistance and strongly oriented to the (111) face on the copper seed layers and to deposit the copper thin films having good coverability onto fine contact holes. SOLUTION: An aqueous solution of copper silicofluoride is used as an electrolytic solution, and copper thin films are selectively deposited on copper seed layers by plating. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2002105687A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2002105687A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2002105687A3</originalsourceid><addsrcrecordid>eNrjZFD2dQ3x8HdRcPMPUgjwcQzx9HNXcPYPCHANUgjx8PRTcPP08eVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBkaGBqZmFuaOxkQpAgCKkiL3</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR PLATING COPPER THIN FILM</title><source>esp@cenet</source><creator>HARA TORU ; MIYAMOTO MITSUO ; SAKAMOTO HITOSHI ; TATENO TOSHIO ; OSADA TOSHIAKI ; ISHIDA SHOICHI</creator><creatorcontrib>HARA TORU ; MIYAMOTO MITSUO ; SAKAMOTO HITOSHI ; TATENO TOSHIO ; OSADA TOSHIAKI ; ISHIDA SHOICHI</creatorcontrib><description>PROBLEM TO BE SOLVED: To reduce defects generated on the boundaries of copper seed layers by depositing copper thin films having low specific resistance and strongly oriented to the (111) face on the copper seed layers and to deposit the copper thin films having good coverability onto fine contact holes. SOLUTION: An aqueous solution of copper silicofluoride is used as an electrolytic solution, and copper thin films are selectively deposited on copper seed layers by plating.</description><edition>7</edition><language>eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; METALLURGY ; PRINTED CIRCUITS ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020410&DB=EPODOC&CC=JP&NR=2002105687A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020410&DB=EPODOC&CC=JP&NR=2002105687A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HARA TORU</creatorcontrib><creatorcontrib>MIYAMOTO MITSUO</creatorcontrib><creatorcontrib>SAKAMOTO HITOSHI</creatorcontrib><creatorcontrib>TATENO TOSHIO</creatorcontrib><creatorcontrib>OSADA TOSHIAKI</creatorcontrib><creatorcontrib>ISHIDA SHOICHI</creatorcontrib><title>METHOD FOR PLATING COPPER THIN FILM</title><description>PROBLEM TO BE SOLVED: To reduce defects generated on the boundaries of copper seed layers by depositing copper thin films having low specific resistance and strongly oriented to the (111) face on the copper seed layers and to deposit the copper thin films having good coverability onto fine contact holes. SOLUTION: An aqueous solution of copper silicofluoride is used as an electrolytic solution, and copper thin films are selectively deposited on copper seed layers by plating.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>METALLURGY</subject><subject>PRINTED CIRCUITS</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2dQ3x8HdRcPMPUgjwcQzx9HNXcPYPCHANUgjx8PRTcPP08eVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBkaGBqZmFuaOxkQpAgCKkiL3</recordid><startdate>20020410</startdate><enddate>20020410</enddate><creator>HARA TORU</creator><creator>MIYAMOTO MITSUO</creator><creator>SAKAMOTO HITOSHI</creator><creator>TATENO TOSHIO</creator><creator>OSADA TOSHIAKI</creator><creator>ISHIDA SHOICHI</creator><scope>EVB</scope></search><sort><creationdate>20020410</creationdate><title>METHOD FOR PLATING COPPER THIN FILM</title><author>HARA TORU ; MIYAMOTO MITSUO ; SAKAMOTO HITOSHI ; TATENO TOSHIO ; OSADA TOSHIAKI ; ISHIDA SHOICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2002105687A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>METALLURGY</topic><topic>PRINTED CIRCUITS</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HARA TORU</creatorcontrib><creatorcontrib>MIYAMOTO MITSUO</creatorcontrib><creatorcontrib>SAKAMOTO HITOSHI</creatorcontrib><creatorcontrib>TATENO TOSHIO</creatorcontrib><creatorcontrib>OSADA TOSHIAKI</creatorcontrib><creatorcontrib>ISHIDA SHOICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HARA TORU</au><au>MIYAMOTO MITSUO</au><au>SAKAMOTO HITOSHI</au><au>TATENO TOSHIO</au><au>OSADA TOSHIAKI</au><au>ISHIDA SHOICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PLATING COPPER THIN FILM</title><date>2002-04-10</date><risdate>2002</risdate><abstract>PROBLEM TO BE SOLVED: To reduce defects generated on the boundaries of copper seed layers by depositing copper thin films having low specific resistance and strongly oriented to the (111) face on the copper seed layers and to deposit the copper thin films having good coverability onto fine contact holes. SOLUTION: An aqueous solution of copper silicofluoride is used as an electrolytic solution, and copper thin films are selectively deposited on copper seed layers by plating.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | METHOD FOR PLATING COPPER THIN FILM |
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