METHOD FOR PLATING COPPER THIN FILM

PROBLEM TO BE SOLVED: To reduce defects generated on the boundaries of copper seed layers by depositing copper thin films having low specific resistance and strongly oriented to the (111) face on the copper seed layers and to deposit the copper thin films having good coverability onto fine contact h...

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Bibliographische Detailangaben
Hauptverfasser:	HARA TORU, MIYAMOTO MITSUO, SAKAMOTO HITOSHI, TATENO TOSHIO, OSADA TOSHIAKI, ISHIDA SHOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce defects generated on the boundaries of copper seed layers by depositing copper thin films having low specific resistance and strongly oriented to the (111) face on the copper seed layers and to deposit the copper thin films having good coverability onto fine contact holes. SOLUTION: An aqueous solution of copper silicofluoride is used as an electrolytic solution, and copper thin films are selectively deposited on copper seed layers by plating.