PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To make compatible the positioning accuracy of an adhesive layer and the miniaturization of a semiconductor device due to a DBG method. SOLUTION: An adhesive layer 4 for adhering a die 13 cut out of a wafer 1 to the other member is formed as (a) on the surface of the wafer 1 wh...
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creator | MIMATA TSUTOMU |
description | PROBLEM TO BE SOLVED: To make compatible the positioning accuracy of an adhesive layer and the miniaturization of a semiconductor device due to a DBG method. SOLUTION: An adhesive layer 4 for adhering a die 13 cut out of a wafer 1 to the other member is formed as (a) on the surface of the wafer 1 where a desired integrated circuit is formed. To the wafer 1 with which a recessed groove 9 for separation is formed from the front side and the adhesive layer 4 is formed, film thinning treatment is applied from the back side until exposing the recessed groove 9. Since the adhesive layer 4 is formed on the wafer 1 before dividing into dies 13, namely, before back grinding, positioning accuracy in the formation of the adhesive layer 4 can be provided. On the other hand, since the adhesive layer 4 is formed on the surface of the wafer 1 where the desired integrated circuit is formed, back grinding can be applied to the back side where the circuit is not formed and the positioning accuracy of the adhesive layer 4 and the miniaturization of the semiconductor device due to the back grinding method can be made compatible. |
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SOLUTION: An adhesive layer 4 for adhering a die 13 cut out of a wafer 1 to the other member is formed as (a) on the surface of the wafer 1 where a desired integrated circuit is formed. To the wafer 1 with which a recessed groove 9 for separation is formed from the front side and the adhesive layer 4 is formed, film thinning treatment is applied from the back side until exposing the recessed groove 9. Since the adhesive layer 4 is formed on the wafer 1 before dividing into dies 13, namely, before back grinding, positioning accuracy in the formation of the adhesive layer 4 can be provided. On the other hand, since the adhesive layer 4 is formed on the surface of the wafer 1 where the desired integrated circuit is formed, back grinding can be applied to the back side where the circuit is not formed and the positioning accuracy of the adhesive layer 4 and the miniaturization of the semiconductor device due to the back grinding method can be made compatible.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020405&DB=EPODOC&CC=JP&NR=2002100588A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020405&DB=EPODOC&CC=JP&NR=2002100588A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIMATA TSUTOMU</creatorcontrib><title>PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To make compatible the positioning accuracy of an adhesive layer and the miniaturization of a semiconductor device due to a DBG method. SOLUTION: An adhesive layer 4 for adhering a die 13 cut out of a wafer 1 to the other member is formed as (a) on the surface of the wafer 1 where a desired integrated circuit is formed. To the wafer 1 with which a recessed groove 9 for separation is formed from the front side and the adhesive layer 4 is formed, film thinning treatment is applied from the back side until exposing the recessed groove 9. Since the adhesive layer 4 is formed on the wafer 1 before dividing into dies 13, namely, before back grinding, positioning accuracy in the formation of the adhesive layer 4 can be provided. On the other hand, since the adhesive layer 4 is formed on the surface of the wafer 1 where the desired integrated circuit is formed, back grinding can be applied to the back side where the circuit is not formed and the positioning accuracy of the adhesive layer 4 and the miniaturization of the semiconductor device due to the back grinding method can be made compatible.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAKCPJ3CXUO8fT3U_B1DfHwd1Fw8w9SCHb19XT29wPJAHkurmGezq48DKxpiTnFqbxQmptByc01xNlDN7UgPz61uCAxOTUvtSTeK8DIwMDI0MDA1MLC0ZgoRQCtlCU3</recordid><startdate>20020405</startdate><enddate>20020405</enddate><creator>MIMATA TSUTOMU</creator><scope>EVB</scope></search><sort><creationdate>20020405</creationdate><title>PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE</title><author>MIMATA TSUTOMU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2002100588A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIMATA TSUTOMU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIMATA TSUTOMU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE</title><date>2002-04-05</date><risdate>2002</risdate><abstract>PROBLEM TO BE SOLVED: To make compatible the positioning accuracy of an adhesive layer and the miniaturization of a semiconductor device due to a DBG method. SOLUTION: An adhesive layer 4 for adhering a die 13 cut out of a wafer 1 to the other member is formed as (a) on the surface of the wafer 1 where a desired integrated circuit is formed. To the wafer 1 with which a recessed groove 9 for separation is formed from the front side and the adhesive layer 4 is formed, film thinning treatment is applied from the back side until exposing the recessed groove 9. Since the adhesive layer 4 is formed on the wafer 1 before dividing into dies 13, namely, before back grinding, positioning accuracy in the formation of the adhesive layer 4 can be provided. On the other hand, since the adhesive layer 4 is formed on the surface of the wafer 1 where the desired integrated circuit is formed, back grinding can be applied to the back side where the circuit is not formed and the positioning accuracy of the adhesive layer 4 and the miniaturization of the semiconductor device due to the back grinding method can be made compatible.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE |
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