PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To make compatible the positioning accuracy of an adhesive layer and the miniaturization of a semiconductor device due to a DBG method. SOLUTION: An adhesive layer 4 for adhering a die 13 cut out of a wafer 1 to the other member is formed as (a) on the surface of the wafer 1 where a desired integrated circuit is formed. To the wafer 1 with which a recessed groove 9 for separation is formed from the front side and the adhesive layer 4 is formed, film thinning treatment is applied from the back side until exposing the recessed groove 9. Since the adhesive layer 4 is formed on the wafer 1 before dividing into dies 13, namely, before back grinding, positioning accuracy in the formation of the adhesive layer 4 can be provided. On the other hand, since the adhesive layer 4 is formed on the surface of the wafer 1 where the desired integrated circuit is formed, back grinding can be applied to the back side where the circuit is not formed and the positioning accuracy of the adhesive layer 4 and the miniaturization of the semiconductor device due to the back grinding method can be made compatible.