MANUFACTURING DEVICE FOR POLYCRYSTALLINE SEMICONDUCTOR FILM

PROBLEM TO BE SOLVED: To provide a laser anneal device for manufacturing a polycrystalline semiconductor film, whereby a highly reliable transistor free of characteristic variations can be obtained by preventing inclusion of impurities to a polycrystalline semiconductor film and reducing projection...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	FUJIMURA TAKASHI, TSUTSUMI JUNSEI, KAWAMURA SHINICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a laser anneal device for manufacturing a polycrystalline semiconductor film, whereby a highly reliable transistor free of characteristic variations can be obtained by preventing inclusion of impurities to a polycrystalline semiconductor film and reducing projection of a grain part of polycrystalline silicon, when a polycrystalline semiconductor film is formed by laser annealing method. SOLUTION: The manufacturing apparatus of a polycrystalline semiconductor film for crystallizing an amorphous semiconductor film formed on an insulated substrate by means of a beam anneal method has a local shield which can control the atmosphere of the surface of a substrate, which is subjected to beam irradiation in the periphery of laser beam, when laser beam is directed to an amorphous semiconductor film.