THIN FILM-FORMING DEVICE

PROBLEM TO BE SOLVED: To prevent a radical generated in plasma discharge space from entering the inner space of a partition wall plate for coming into contact with a material gas in the inner space of the partition wall plate in a thin film- forming device that divides the inside of a vacuum reactio...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TANAKA MASAHIKO, IKEMOTO MANABU, YOKOGAWA NAOAKI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To prevent a radical generated in plasma discharge space from entering the inner space of a partition wall plate for coming into contact with a material gas in the inner space of the partition wall plate in a thin film- forming device that divides the inside of a vacuum reaction chamber into the plasma discharge space and film-forming treatment one by the partition wall plate having a plurality of holes where the radical passes, introduces gas into the plasma discharge space for generating the radical by plasma, introduces the radical into the film-forming treatment space through the plurality of holes on the partition wall plate, at the same time, directly introduces the material gas into the film-forming treatment space, allows the introduced radical to react to the material gas in the film-forming treatment space, and forms a film on a substrate arranged in the film-forming treatment space. SOLUTION: The partition wall plate for dividing the inside of the vacuum reaction chamber into the plasma discharge and film-forming treatment space is fixed or joined by allowing a plurality of laminated plate bodies to bond each contact surface over the entire surface.