SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide an SiN film that has a small amount of leakage current even if film thickness is reduced to 0.4 nm or less, and a semiconductor device that uses the SiN film as a capacitor insulating film. SOLUTION: In a pressure reduction CVD device, an ammonia-family gas and SiCl4...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	OGOSHI KATSUAKI, HIGASHIMOTO MASAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an SiN film that has a small amount of leakage current even if film thickness is reduced to 0.4 nm or less, and a semiconductor device that uses the SiN film as a capacitor insulating film. SOLUTION: In a pressure reduction CVD device, an ammonia-family gas and SiCl4 are supplied as a raw material of N and Si, respectively, onto the SiN film formed by allowing an Si substrate to be subjected to thermal nitriding, and a CVD-SiN film is deposited at temperature of 650 deg.C or less and 550 deg.C or more.