MATERIAL FOR Ta-BASED FILM FORMATION, Ta-BASED FILM FORMATION METHOD AND ULSI

PROBLEM TO BE SOLVED: To provide a method for forming a conductive Ta-based thin film as a barrier film for copper wiring coping with the tendency of fining ULSI (ultra-large scale integrated circuit). SOLUTION: This film formation method comprises charging a material for conductive Ta-based film fo...

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Bibliographische Detailangaben
Hauptverfasser:	HOSHINO ASAKO, MACHIDA HIDEAKI, SUZUKI TOSHIE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a conductive Ta-based thin film as a barrier film for copper wiring coping with the tendency of fining ULSI (ultra-large scale integrated circuit). SOLUTION: This film formation method comprises charging a material for conductive Ta-based film formation including C2H5N=Ta[N(C2H5)2]33 and [N(C2H5)2]4Ta in a vessel 1c, bubbling the mixture of the Ta compounds with He, and vaporizing the resulting mixture to form a film on an Si substrate 5 using a CVD apparatus.