METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern of a semiconductor element which can prevent failure of a photoresist pattern such as undercutting and footing which are to be caused by mutual mixing between an organic antireflection film and photoresist. SOLUTION: This forming m...

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Bibliographische Detailangaben
Hauptverfasser:	JUNG JAEANG, CHA WON KOO, HONG SUNG-EUN, JIN SUU KIMU, JUNG MIN-HO, JUN SUU RII
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern of a semiconductor element which can prevent failure of a photoresist pattern such as undercutting and footing which are to be caused by mutual mixing between an organic antireflection film and photoresist. SOLUTION: This forming method is provided with a step wherein the organic antireflection film 120 is formed in an upper part of a semiconductor substrate 100 and a hard baking is performed, a step wherein a curing is performed to the organic antireflection film 120 and a carbonized film 120' is formed on a surface of the film 120, a step wherein photoresist is spread on an upper part of the carbonized film 120' and a soft baking is performed, a step wherein an exposure and development is performed to the substrate on which the photoresist is spread and a photoresist pattern 140' is formed, and a step for cleaning resultant substance.