METHOD OF PRODUCING EPITAXIAL MULTILAYER FILM FOR SOFT X-RAY MIRROR

PROBLEM TO BE SOLVED: To provide a method of producing a multilayer film mirror used in a soft X-ray region of 2.3 to 4.4 nm, which comprises stacking the multilayer film by epitaxial growth and by which crystal defects in the multilayer film can be reduced and the reflectivity to soft X-rays can be...

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Bibliographische Detailangaben
1. Verfasser:	YAMAMOTO HARUYA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL GAMMA RAY OR X-RAY MICROSCOPES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL IRRADIATION DEVICES METALLURGY NUCLEAR ENGINEERING NUCLEAR PHYSICS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of producing a multilayer film mirror used in a soft X-ray region of 2.3 to 4.4 nm, which comprises stacking the multilayer film by epitaxial growth and by which crystal defects in the multilayer film can be reduced and the reflectivity to soft X-rays can be improved. SOLUTION: The epitaxial multilayer film comprising titanium and copper or titanium and cobalt, being expected to be high in the reflectivity, is formed on a sapphire single crystal substrate excellent in heat resistance and chemical stability by a vacuum vapor deposition method for titanium, cobalt, copper or the like under ultra-high vacuum while controlling the crystal orientation, the substrate temperature and the vapor deposition speed.