INSULATING GATE FIELD EFFECT TRANSISTOR

PROBLEM TO BE SOLVED: To solve the problem that conventionally a leakage current is generated by the contact defect of a body contact area in the form of grid, and ON- resistance cannot be improved in the form of stripe although there is a method for grid-like or stripe-like formation as a wiring me...

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Bibliographische Detailangaben

1. Verfasser:	KUBO HIROTOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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