INSULATING GATE FIELD EFFECT TRANSISTOR

PROBLEM TO BE SOLVED: To solve the problem that conventionally a leakage current is generated by the contact defect of a body contact area in the form of grid, and ON- resistance cannot be improved in the form of stripe although there is a method for grid-like or stripe-like formation as a wiring method for a trench-type power MOSFET. SOLUTION: In a stripe-like trench, adjacent trenches are formed, while being folded so that a wide part and a narrow part can be provided on a wafer; and the body contact area is located in the wide part by alternately locating the adjacent wide and narrow parts. With this form, the stability of potential is improved and the leakage current can be reduced. Furthermore, ON-resistance can be reduced, and while making the channel width per unit area improved, there is an advantage with respect to rules.