APPARATUS FOR FORMING COATING FILM

PROBLEM TO BE SOLVED: To provide an apparatus for forming a coating film, whereby coating in a thin coating thickness is possible, the unevenness of a coating thickness can be eliminated, and the amount of the coating fluid used can be diminished. SOLUTION: A nozzle 21 that ejects a resist fluid B i...

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Bibliographische Detailangaben
Hauptverfasser:	ANAI NORIYUKI, TATEYAMA KIYOHISA, MOTODA KIMIO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPARATUS SPECIALLY ADAPTED THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ATOMISING APPARATUS BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MIXING, e.g. DISSOLVING, EMULSIFYING, DISPERSING NOZZLES ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PHYSICS SEMICONDUCTOR DEVICES SPRAYING APPARATUS SPRAYING OR ATOMISING IN GENERAL TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an apparatus for forming a coating film, whereby coating in a thin coating thickness is possible, the unevenness of a coating thickness can be eliminated, and the amount of the coating fluid used can be diminished. SOLUTION: A nozzle 21 that ejects a resist fluid B in stripes and a wafer W are relatively moved in the direction crossing to that of the arrangement of the nozzles. The nozzle 21 is connected to a resist storing tank 25 through a flow control means 37, and the nozzle hole 22a of a solvent feed means 22 communicating with a solvent storing tank 26 is connected to the mid of the nozzle 21. By this constitution, the fluid B is ejected after it is mixed with a solvent A in the nozzle 21 for the adjustment of its viscosity and concentration to thereby form a uniform thin resist film over the surface of the wafer W.