SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To solve a problem that, when a reverse-bias voltage is applied to a collector of a lateral transistor, a leakage current is made to flow from the emitter diffused layer 6 into the element isolation region 4 of the lateral transistor. SOLUTION: A wiring layer 35 is laid under a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: HOASHI MASAHARU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To solve a problem that, when a reverse-bias voltage is applied to a collector of a lateral transistor, a leakage current is made to flow from the emitter diffused layer 6 into the element isolation region 4 of the lateral transistor. SOLUTION: A wiring layer 35 is laid under an emitter electrode wiring layer 33, and a voltage corresponding to a reverse-bias voltage applied to a collector diffused layer 27 is applied to a wiring layer 35.