ION DOPING DEVICE AND SEMICONDUCTOR

PROBLEM TO BE SOLVED: To provide an ion doping device capable of reducing particles. SOLUTION: The inside of a plasma chamber 12 is subjected to a convex/ concave processing. Thereby, particles deposited in the plasma chamber 12 are hardly peeled off to inhibit a generation of the particles in the p...

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Bibliographische Detailangaben
Hauptverfasser:	KASHIRO TAKESHI, SHIBATA MITSURU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an ion doping device capable of reducing particles. SOLUTION: The inside of a plasma chamber 12 is subjected to a convex/ concave processing. Thereby, particles deposited in the plasma chamber 12 are hardly peeled off to inhibit a generation of the particles in the plasma chamber 12.