WAFER HEATER WITH ELECTROSTATIC ATTRACTION FUNCTION

PROBLEM TO BE SOLVED: To provide a wafer heater with an electrostatic attraction function, that reduces the temperature difference between heat generation and non-heat generation parts as much as possible, has an excellent soaking property over the entire surface of a heat generation layer and at th...

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Bibliographische Detailangaben
Hauptverfasser: SEKI KATSUKI, ARAI NOBUO, KANO MASAKI, KUSHIBASHI TAKUMA, KIMURA NOBORU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a wafer heater with an electrostatic attraction function, that reduces the temperature difference between heat generation and non-heat generation parts as much as possible, has an excellent soaking property over the entire surface of a heat generation layer and at the same time a resistance value, having appropriate and sufficient electrostatic attraction force, even in an intermediate temperature region, and prevents the damage of a device caused by a leakage current and peeling in a junction boundary layer, and can be stably used, even if temperature rises and falls quickly. SOLUTION: This wafer heater has the electrostatic attraction function. In the electrostatic attraction function, a conductive heat generation layer is joined and formed on one surface of a support substrate, a conductive electrode for electrostatic attraction is joined and formed on the other, and, furthermore, an insulating layer for covering the heat generation layer and electrode for electrostatic attraction is joined. In this case, the quality of the material of the support substrate and/or insulating layer should be pynolysis boron nitride where a third element is doped.