SEMICONDUCTOR MEMORY

PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a voltage detecting circuit which can detect high voltage of a fixed value is included in a test circuit. SOLUTION: A semiconductor memory is provided with a voltage detecting circuit 20. The voltage detecting circuit 20 divides test c...

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1. Verfasser: MITSUI KATSUKICHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a voltage detecting circuit which can detect high voltage of a fixed value is included in a test circuit. SOLUTION: A semiconductor memory is provided with a voltage detecting circuit 20. The voltage detecting circuit 20 divides test command voltage constituting a test command signal EXTSH into one third by a voltage dividing circuit 140, and divides external power source voltage into one half. And two divided voltage are compared by a comparing circuit 150 of a differential amplifier type, test command voltage is detected, and a circuit to be tested of a semiconductor memory is shifted to a test mode. P channel MOS transistors 116-118, 126, 127 constituting voltage dividing circuits 140, 160 are all operated with a resistance mode.