SYSTEM AND METHOD FOR SPUTTERING

PROBLEM TO BE SOLVED: To provide a system and method for sputtering, by which an insulating film having high breakedown voltage can be deposited. SOLUTION: In the case where an alumina film, an aluminum nitride film, a silicon dioxide film and a silicon nitride film are deposited by the sputtering m...

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Bibliographische Detailangaben
Hauptverfasser:	KIYONO TOMOYUKI, UMEHARA SATOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a system and method for sputtering, by which an insulating film having high breakedown voltage can be deposited. SOLUTION: In the case where an alumina film, an aluminum nitride film, a silicon dioxide film and a silicon nitride film are deposited by the sputtering method, the sputtering system which has a substrate, a vacuum vessel having a target electrode inside, a gas feed system for feeding inert gas and oxygen or nitrogen into the vacuum vessel, and a power source for applying voltage between the vacuum vessel and the target to form a plasma region in the vacuum vessel is used. Further, a gaseous mixture containing 0.3-1.0% gaseous hydrogen is fed by the above gas feed system.