MOS SEMICONDUCTOR ELEMENT CONTAINING DIODE FOR PREVENTING STATIC ELECTRICITY BETWEEN GATE AND EMITTER

PROBLEM TO BE SOLVED: To provide a MOS semiconductor element which can be formed through a simple process without adding any mask and contains a diode that can suppress the leakage currents flowing through a static electricity diode between the emitter and the gate and is used for preventing static...

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Bibliographische Detailangaben
Hauptverfasser:	KIM HYUNUL, KIN SHUICHI, RI KEIHYUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a MOS semiconductor element which can be formed through a simple process without adding any mask and contains a diode that can suppress the leakage currents flowing through a static electricity diode between the emitter and the gate and is used for preventing static electricity between the gate and emitter. SOLUTION: In this MOS semiconductor element, a static electricity diode 420 is formed on a thick field insulating film 400, and a guard ring 411 under the diode 420 is set in a floating state where the ring 411 is not connected to the emitter electrode 360.