MANUFACTURING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT MANUFACTURED BY THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit, capable of suppressing size of transistor small by only changing a mask after operational check of a prototype. SOLUTION: The prototypic semiconductor integrated circuit is manufactured and checked, by forming impurity diffusion regions 16P and 16N of a transistor in a prescribed region (region comprising solid line part and broken line part) enclosed by field oxide film 17 on a semiconductor wafer 15 for a prototype. For successful operation of the prototype semiconductor integrated circuit, the semiconductor integrated circuit for shipment is manufactured, by forming impurity diffusion region 16P and 16N of transistor in the prescribed region (region comprising only solid line part) which is enclosed by the field oxide film on the semiconductor wafer 15 for shipment.