METHOD AND APPARATUS FOR FORMING SILICON NITRIDE FILM

METHOD AND APPARATUS FOR FORMING SILICON NITRIDE FILM

PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a silicon nitride film having a composition of substantially stoichiometric ratio at a low temperature and an enhanced processing rate. SOLUTION: The reaction tube 2 of a heat treatment furnace 1 is coupled with a second gas intr...

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Bibliographische Detailangaben
Hauptverfasser: KUMAGAI TAKESHI, TOHARA ATSUSHI, KATO HISASHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a silicon nitride film having a composition of substantially stoichiometric ratio at a low temperature and an enhanced processing rate. SOLUTION: The reaction tube 2 of a heat treatment furnace 1 is coupled with a second gas introduction pipe 14 for introducing trimethylamine into the reaction tube 2. The second gas introduction pipe 14 is provided with a heater 15 for heating trimethylamine. A constricted part 16 is formed in the second gas introduction pipe 14 on the downstream side of the heater 15. Trimethylamine is heated at 550 deg.C by means of the heater 15 and fed through the second gas introduction pipe 14 into the reaction tube 2.