METHOD FOR FORMING FILM

PROBLEM TO BE SOLVED: To provide a method for forming a film having a dielectric constant of 2.7 or less while preventing surface roughening or cracking of a thick film. SOLUTION: A main gas component comprising siloxane and N2O is admixed with an inert gas or nitrogen gas (N2) for dilution and subj...

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Bibliographische Detailangaben
Hauptverfasser:	OHIRA KOICHI, SHIOTANI YOSHIMI, IKAKURA HIROSHI, SUZUKI TOMOMI, OGAWARA SHOJI, YAMAMOTO YOICHI, MAEDA KAZUO, KOTAKE YUICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a film having a dielectric constant of 2.7 or less while preventing surface roughening or cracking of a thick film. SOLUTION: A main gas component comprising siloxane and N2O is admixed with an inert gas or nitrogen gas (N2) for dilution and subjected to plasma reaction thus forming an insulation film 22 on a substrate 21.