METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device whereby no damage is caused to an Si substrate, controllability of high melting point metallic silicide (Ti silicide)/Si interface is improved, junction leakage is reduced, thin junction is formed, and thermal stabilit...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	YAMAUCHI MICHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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