METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device whereby no damage is caused to an Si substrate, controllability of high melting point metallic silicide (Ti silicide)/Si interface is improved, junction leakage is reduced, thin junction is formed, and thermal stability of a silicide film is improved. SOLUTION: The method of manufacturing the semiconductor device, which has a high melting point metallic silicide film on an impurity diffusion layer of the silicon substrate, comprises a step of preparing a semiconductor substrate 41 having an active region and an element separation region 42, a step of forming the impurity diffusion layer 43 on the active region, a step of removing a natural oxide film 44a when the natural oxide film 44a is formed on the impurity diffusion layer 43 in the step of forming the impurity diffusion layer 43, a step of forming a cleaned oxide film 44a on the impurity diffusion layer 43, a step of forming a high melting point metallic film (Ti) 45 on the cleaned oxide film 44a, and a step of changing the high melting point metallic film (Ti) 45 to a high melting point metallic silicide film (Ti silicide film) 46 by thermal treatment.