DIODE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a diode, in which the overall junction capacitance can be reduced, without having to lower ESD resistance. SOLUTION: In a diode, having a function of a P-type layer and an N-type layer, the P-type layer has a main junction part a, and a junction part having density d...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	YOSHITAKE TOMONOBU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a diode, in which the overall junction capacitance can be reduced, without having to lower ESD resistance. SOLUTION: In a diode, having a function of a P-type layer and an N-type layer, the P-type layer has a main junction part a, and a junction part having density different from that at the main junction part a.