METHOD OF MANUFACTURING SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To always obtain a process of accurately etching a laminated film without leaving residues, independently of the method of forming a titanium film in a semiconductor manufacturing method, comprising a process of etching a laminated film composed of a tungsten film and a titanium film. SOLUTION: A tungsten film 20, formed on a titanium film 18, is made to serve as a wiring layer 22. An antireflection film 26 is formed on the wiring layer 22, and a photoresist film 28 provided thereon is patterned. The antireflection film 26 is etched through the use of a mixed gas of SF6 and Cl2. Then, the tungsten film 20 is etched by the use of a mixed gas of SF6 and Cl2, and thereafter the titanium film 18 is etched through the use of a mixture gas of Cl2 and BCl3.