METHOD FOR REFORMING FILM-FORMATION SURFACE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for reforming a film-formation surface and a method for manufacturing a semiconductor device using the same by which the base dependency to film formation can be thoroughly eliminated on a film- formation surface, by eliminating an additional energy such as...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MAEDA KAZUO, AZUMI TAKAYOSHI, SASAKI KIYOTAKA, SUZUKI SETSU
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for reforming a film-formation surface and a method for manufacturing a semiconductor device using the same by which the base dependency to film formation can be thoroughly eliminated on a film- formation surface, by eliminating an additional energy such as plasma irradiation or high temperature heating, processing in a vacuum, etc., by an extremely simplified method. SOLUTION: This method includes a step in which a gas or an acqueous solution containing ammonium, hydrazine, amine, an amino compound or these derivatives is brought into contact with a film-formation surface 12a before an insulation film 15 is formed on the surface 12a of a substrate 102 to be given by a film, and a step in which a gas or an aqueous solution containing a hydrogen peroxide, an azone, an oxygen, a nitric acid, a sulfic acid or these derivatives is brought into contact with the surface 12a.