PLASMA PROCESSING EQUIPMENT AND FABRICATION METHOD FOR SEMICONDUCTOR EQUIPMENT

PROBLEM TO BE SOLVED: To provide plasma processing equipment which prevents charging damages of an object to be processed or nonuniform plasma processing speed within the surface of the object; and a method for fabricating high quality semiconductor equipment which does not cause nonuniform plasma p...

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Bibliographische Detailangaben
Hauptverfasser:	KAIHARA TATSU, INO KAZUHIDE, OMI TADAHIRO, OOHATA HISAKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide plasma processing equipment which prevents charging damages of an object to be processed or nonuniform plasma processing speed within the surface of the object; and a method for fabricating high quality semiconductor equipment which does not cause nonuniform plasma processing or charging damages. SOLUTION: The plasma etching equipment has a processing chamber 1, a lower electrode 2 and an upper electrode 3 which are placed facing each other in the processing chamber 1, and a magnet 4 which is placed along the periphery of the processing chamber 1. The magnet 4 forms a graded magnetic field in a manner that the field strength in a direction of E1×B, which is the drift direction of electron near the electrode 2 is weaker in the downstream than that of the upstream. At the time of etching process, a high frequency electric power is applied to the upper electrode 3 as well by an upper high frequency power source.