TFT PROCESS WITH HIGH TRANSMITTANCE

PROBLEM TO BE SOLVED: To obtain a method for manufacturing a TFT panel in which a transmittance of the panel is increased. SOLUTION: The method for manufacturing the TFT(Thin Film Transistor) panel with the high transmittance comprises an intermediate-layer process. After the intermediate-layer proc...

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Bibliographische Detailangaben
Hauptverfasser:	RIKU ICHIMIN, CHO SESHO, KO TEIKI
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a method for manufacturing a TFT panel in which a transmittance of the panel is increased. SOLUTION: The method for manufacturing the TFT(Thin Film Transistor) panel with the high transmittance comprises an intermediate-layer process. After the intermediate-layer process has been executed, the TFT panel is etched to remove a silicon nitride layer without coverage of a source conductive pattern and a drain conductive pattern. Accordingly, the transmittance of a portion of the TFT without shield of the source conductive pattern and the drain conductive pattern is higher than that of a portion of the TFT with shield of the source conductive pattern and the drain conductive pattern. The intermediate- layer process has three aspects. In the first aspect, the first step is to bake the TFT panel, then form a contact hole in an insulating layer of the TFT panel. Finally, the source conductive pattern and the drain conductive pattern are formed.