APPARATUS AND METHOD FOR CONTROLLING WAFER ENVIRONMENT BETWEEN THERMAL CLEANING AND HEAT TREATMENT

PROBLEM TO BE SOLVED: To provide an apparatus and a method for controlling the wafer temperature and environment. SOLUTION: The apparatus 10 of this inventive comprises an RTP chamber (20) having an inert or reducing environment. The RTP chamber (20) contains a pedestal 24 for holding a single wafer...

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Hauptverfasser: WALTER J FREY, MICHAEL J GYANBERO, NINA GAG, BYONJU PAKU, DONALD L WILSON, BALLANTINE ARNE W, PETER A EMI
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creator WALTER J FREY
MICHAEL J GYANBERO
NINA GAG
BYONJU PAKU
DONALD L WILSON
BALLANTINE ARNE W
PETER A EMI
description PROBLEM TO BE SOLVED: To provide an apparatus and a method for controlling the wafer temperature and environment. SOLUTION: The apparatus 10 of this inventive comprises an RTP chamber (20) having an inert or reducing environment. The RTP chamber (20) contains a pedestal 24 for holding a single wafer 16, and a heater unit 22 disposed to heat the single wafer uniformly at a high rate. The apparatus 10 further comprises a cooling chamber 30 having a reducing or inert environment and disposed contiguously to the RTP chamber to open selectively thereto, a first loading chamber 40 having an inert or reducing environment and containing a cassette 44 for holding one or a plurality of wafers, and a heat treatment chamber 50, e.g. an LPCVD furnace, disposed to execute heat treatment of a wafer in the cassette. Wafer handlers 80-83 for carrying a wafer is subjected to temperature control.
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SOLUTION: The apparatus 10 of this inventive comprises an RTP chamber (20) having an inert or reducing environment. The RTP chamber (20) contains a pedestal 24 for holding a single wafer 16, and a heater unit 22 disposed to heat the single wafer uniformly at a high rate. The apparatus 10 further comprises a cooling chamber 30 having a reducing or inert environment and disposed contiguously to the RTP chamber to open selectively thereto, a first loading chamber 40 having an inert or reducing environment and containing a cassette 44 for holding one or a plurality of wafers, and a heat treatment chamber 50, e.g. an LPCVD furnace, disposed to execute heat treatment of a wafer in the cassette. Wafer handlers 80-83 for carrying a wafer is subjected to temperature control.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
CONVEYING
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
HANDLING THIN OR FILAMENTARY MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PACKING
PERFORMING OPERATIONS
PNEUMATIC TUBE CONVEYORS
SEMICONDUCTOR DEVICES
SHOP CONVEYOR SYSTEMS
STORING
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING ORTIPPING
TRANSPORTING
title APPARATUS AND METHOD FOR CONTROLLING WAFER ENVIRONMENT BETWEEN THERMAL CLEANING AND HEAT TREATMENT
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