APPARATUS AND METHOD FOR CONTROLLING WAFER ENVIRONMENT BETWEEN THERMAL CLEANING AND HEAT TREATMENT

PROBLEM TO BE SOLVED: To provide an apparatus and a method for controlling the wafer temperature and environment. SOLUTION: The apparatus 10 of this inventive comprises an RTP chamber (20) having an inert or reducing environment. The RTP chamber (20) contains a pedestal 24 for holding a single wafer...

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Bibliographische Detailangaben
Hauptverfasser:	WALTER J FREY, MICHAEL J GYANBERO, NINA GAG, BYONJU PAKU, DONALD L WILSON, BALLANTINE ARNE W, PETER A EMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONVEYING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HANDLING THIN OR FILAMENTARY MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PACKING PERFORMING OPERATIONS PNEUMATIC TUBE CONVEYORS SEMICONDUCTOR DEVICES SHOP CONVEYOR SYSTEMS STORING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING ORTIPPING TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an apparatus and a method for controlling the wafer temperature and environment. SOLUTION: The apparatus 10 of this inventive comprises an RTP chamber (20) having an inert or reducing environment. The RTP chamber (20) contains a pedestal 24 for holding a single wafer 16, and a heater unit 22 disposed to heat the single wafer uniformly at a high rate. The apparatus 10 further comprises a cooling chamber 30 having a reducing or inert environment and disposed contiguously to the RTP chamber to open selectively thereto, a first loading chamber 40 having an inert or reducing environment and containing a cassette 44 for holding one or a plurality of wafers, and a heat treatment chamber 50, e.g. an LPCVD furnace, disposed to execute heat treatment of a wafer in the cassette. Wafer handlers 80-83 for carrying a wafer is subjected to temperature control.