METHOD OF MANUFACTURING SUBSTRATE AND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LIGHT EMITTING ELEMENT

METHOD OF MANUFACTURING SUBSTRATE AND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LIGHT EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide the manufacturing method of a uniform ridge having a forward taper-type ridge and high symmetric property. SOLUTION: A mask pattern 11 is formed on a substrate 10 and isotropic wet etching which does not have dependency is performed on the face orientation of crystal...

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Bibliographische Detailangaben
Hauptverfasser: KATOU GOUSAKU, TANIGUCHI TAKEHIRO, HANZAWA YASUNARI, OKANO NOBUMASA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide the manufacturing method of a uniform ridge having a forward taper-type ridge and high symmetric property. SOLUTION: A mask pattern 11 is formed on a substrate 10 and isotropic wet etching which does not have dependency is performed on the face orientation of crystal including at least a 111} B face. Thus, the substrate 10 having a ridge 10a where both sides are constituted of the 111} B faces is produced by two types of etchings. SDH structure is formed on the substrate 10 and a semiconductor light emitting element is manufactured.