VOLTAGE NONLINEAR RESISTOR AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To obtain a voltage nonlinear resistor which is superior in voltage nonlinearity and has a high energy tolerated dose. SOLUTION: When a voltage nonlinear resistor, containing zinc oxide as a main component, is treated thermally together with baked base sand formed by baking a m...

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Bibliographische Detailangaben
Hauptverfasser:	KATOU TOMOAKI, TAKADA YOSHIO, HORI AKIO, OKUMURA MASATOMI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH ELECTRICITY LIME, MAGNESIA METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES RESISTORS SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a voltage nonlinear resistor which is superior in voltage nonlinearity and has a high energy tolerated dose. SOLUTION: When a voltage nonlinear resistor, containing zinc oxide as a main component, is treated thermally together with baked base sand formed by baking a mixture, consisting of zinc oxide as a main component and bismuth oxide and silicon oxide as additives, a bismuth oxide phase is segregated on the surface layer of the resistor, and bismuth oxide contained in the surface layer has a higher concentration of silicon than the inside of a sintered body. As a result of this setup, a γ-type bismuth oxide phase containing excess oxygen atom can be segregated stably in the surface layer, the surface layer can be made higher in resistance, oxygen atoms are restrained from breaking away from the surface layer and grain boundaries by a high electric field, and the voltage nonlinear resistor can be improved in energy tolerated dose.